Chris Dzombak

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Datasheet for RadioShack Phototransistor

Datasheet and other information for RadioShack phototransistor, part number 276-0145.

Datasheet for RadioShack Phototransistor

As far as I can tell, RadioShack sells exactly one infrared phototransistor. (They’ve really moved away from selling electronic parts in recent years, which in my opinion is too bad.) I recently bought one for a project; I didn’t have the time to order it from one of my usual suppliers (plus, shipping would cost many times the cost of the part). The RadioShack part number is 276-145 or 276-0145, depending on which part of the website you’re looking at.

Of course, this phototransistor comes with no documentation, and there’s no manufacturer specified so you have essentially no hope of finding a complete datasheet. I did some digging on the Web, though, and I was able to find a little more information about this part.

On the RadioShack site, I found some specifications for the phototransistor as well as a short summary of features.

I am also going to reproduce the data here, in case that site is reorganized or the data becomes unavailable for some other reason.

Phototransistor
(276-0145)                   Specifications           Faxback Doc. # 32130

ABSOLUTE MAXIMUM RATINGS (25 Degrees C)

Collector to Emitter Sustaining Voltage (Vce):........................30 V
Emitter to Collector Breakdown Voltage:................................5 V
Collector Current:...................................................25 mA
Operating Temperature Range:..........................-40 to +85 Degrees C
Storage Temperature Range:............................-40 to +85 Degrees C
Lead Soldering Temperature (1/16 inch from case for 5 sec):..240 Degrees C
Relative Humidity at 85 Degrees C:.....................................85%
Power Dissipation at or below 25 Degrees C Free Air Temperature:....100 mW

ELECTRICAL CHARACTERISTICS

Dark Current (Vce = 15 V):..........................................100 nA
Light Current (Vce = 5 V, H = 20 mW/cm):.............................20 nA
Collector to Emitter Saturation Voltage:.............................0.4 V
Rise Time (10 to 90%):............................................5 microS
Fall Time (90 to 10%):............................................5 microS

Specifications are typical; individual units might vary.  Specifications
are subject to change without notice.

(IR-04/22/96)



Phototransistor
(276-0145)                   Features                 Faxback Doc. # 32129

This is a Silicon Nitride Passivated NPN planar phototransistor with
exceptional stable characteristics and high illumination sensitivity;
spectrally and mechanically matched with IR emitter.
(IR-04/22/96)